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| Advance Technical Information HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE(sat) = 600 V = 175 A = 2.1 V E ISOPLUS 227TM (IXGE) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight 50/60 Hz IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 2.4 Clamped inductive load, L = 30 H TC = 25C Maximum Ratings 600 600 20 30 175 112 400 ICM = 200 @ 0.8 VCES 500 -40 ... +150 150 -40 ... +150 2500 3000 V V V V A A A A W C C C V~ V~ Q C EQ G EQ G = Gate, E = Emitter, C = Collector either emitter terminal can be used as Main or Kelvin Emitter Features *Conforms to SOT-227B outline *Isolation voltage 3000 V~ *Very high current, fast switching IGBT *Low VCE(sat) - for minimum on-state conduction losses *MOS Gate turn-on - drive simplicity *Low collector-to-case capacitance (< 50 pF) *Low package inductance (< 5 nH) - easy to drive and to protect Applications *AC motor speed control Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5.5 200 2 400 2.1 V V A mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1 mA , VGE = 0 V = 1 mA, VCE = VGE *DC servo and robot drives *DC choppers *Uninterruptible power supplies (UPS) *Switch-mode and resonant-mode power supplies VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 120A, VGE = 15 V Advantages *Easy to mount with 2 screws *Space savings *High power density (c) 2002 IXYS All rights reserved 98911 (2/02) IXGE Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 50 75 S 200N60B SOT-227B miniBLOC gfs IC = 60 A; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tri Eoff td(on) tri Eon td(off) tri Eoff Inductive load, TJ = 25C IC = 100A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.4 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC =100A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.4 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG IC = 120A, VGE = 15 V, VCE = 0.5 VCES VCE = 25 V, VGE = 0 V, f = 1 MHz 11000 680 190 350 72 131 60 45 2.4 200 160 5.5 360 280 pF pF pF nC nC nC ns ns mJ ns ns 9.6 mJ 60 60 4.8 290 250 8.7 ns ns mJ ns ns mJ RthJC RthCK 0.07 0.25 K/W K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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